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Annealing furnace Product List

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MiniLab-WCF Ultra-High Temperature Wafer Annealing Furnace 2000℃

MiniLab-WCF Ultra-High Temperature Wafer Annealing Furnace 2000℃

6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely accommodates various purposes from research and development to small-scale production.

◾️ Max 2000℃ ◾️ Effective heating range: Φ6 to Φ8 inch single leaf type, or batch type (multi-stage 5-sheet cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater materials: ・C/C composite: Φ6 to Φ8 inch ・PG coating high-purity graphite: Φ6 to Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed control. ◾️ Process pressure control ・APC control (MFC flow, or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output

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Annealing furnace "MiniLab-WCF Ultra-High Temperature Wafer Annealing Furnace"

Annealing furnace "MiniLab-WCF Ultra-High Temperature Wafer Annealing Furnace"

6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely supports various purposes from research and development to small-scale production.

◾️ Max 2000℃ ◾️ Effective heating range: Φ6 to Φ8 inch single leaf type, or batch type (multi-stage 5-sheet cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater material: ・C/C composite: Φ6 to Φ8 inch ・PG coated high purity graphite: Φ6 to Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2 Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Fully automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed operations. ◾️ Process pressure control ・APC control (MFC flow, or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output

  • Annealing furnace
  • Heating device
  • Electric furnace

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Annealing furnace "ANNEAL wafer annealing device"

Annealing furnace "ANNEAL wafer annealing device"

Max 1000℃, MFC maximum 3 systems, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)

High-temperature processing up to 1000°C is possible with the heating stage installed in the high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of three systems, allowing for firing operations at precisely adjusted process gas pressures (with the APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500°C - C/C composite heater: Max 1000°C (only in vacuum or inert gas) - SiC coating heater: Max 1000°C (in vacuum, inert gas, O2)

  • Annealing furnace
  • Heating device
  • Electric furnace

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Annealing furnace "Mini-BENCH-prism ultra-high temperature experimental furnace"

Annealing furnace "Mini-BENCH-prism ultra-high temperature experimental furnace"

Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace

◉ Maximum operating temperature Max2000℃ ◉ Customizable heater structure: - Cylindrical heater: for sintering samples inside a crucible (for solid, powder, granule, and pellet-shaped samples) - Flat heater: for sintering Φ1" to Φ6" wafers and small chip samples ◉ PLC semi-auto control All operations except for temperature adjustment are performed on a touch panel screen. No need for cumbersome valve opening/closing or pump activation; the "vacuum/purge" cycle before sintering and "vent" after sintering are automatically sequenced with one button. ◉ Up to 3 MFCs for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensuring safety during operation Monitoring for cooling water abnormalities, chamber temperature abnormalities, and overpressure abnormalities. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160mm (*installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples in laboratories and new material research and development, can be easily conducted. The main unit is compact yet suitable for research and development in a wide range of fields.

  • Heating device
  • Annealing furnace
  • Electric furnace

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